Semiconductor Engineering

Ambipolar Schottky-based FeFET For Ultrascaled Memory Applications

A new technical paper titled “On the Potential of Ambipolar Schottky-Based Ferroelectric Transistor Designs for Enhanced Memory Windows in Scaled Devices” was published by researchers at Global TCAD ...
Semiconductor Engineering

Schottky Barrier Transistors: Status, Challenges and Modeling Tools

A technical paper titled “Roadmap for Schottky barrier transistors” was published by researchers at University of Surrey, Namlab gGmbH, Forschungszentrum Jülich (FZJ), et al. “In this roadmap we ...
EDN

Imec demos integration of Schottky diodes and HEMTs with a GaN IC

Taking gallium nitride power ICs to the next level, researchers at Imec report co-integration of Schottky barrier diodes and high-electron-mobility transistors (HEMTs) on a smart power platform. The ...
Electronic Design

Infineon Introduces First GaN Power FET to Integrate Schottky Diode

Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...