DURHAM, N.C.--(BUSINESS WIRE)--Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), ...

Wolfspeed, a global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has extended its family of 50-V unmatched GaN HEMT RF power ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in 2022 ...

For nearly two decades, gallium nitride (GaN) semiconductor technology has been exposed to herald a paradigm shift in RF power capability. Though all of these promises haven’t materialized yet, GaN ...

Research and Markets has announced the addition of the "Wolfspeed CGHV40100F RF GaN HEMT: Analysis" report to their offering. Wolfspeed, now Infineon, offers a large range of GaN RF products. The ...

Cree has extended its family of 0.4µm 50V discrete GaN HEMT die with the release of three new components delivering: 20W at 6GHz, 75W at 6GHz and 320W at 4GHz. These add to the 40W and 170W 50V 6GHz ...

A little bit of semiconductor magic made a lot of difference to RF power amplifiers, and looks like it will do the same for mains PSUs. That magic is the ‘two-dimensional electron gas’ that forms ...

San Francisco, CA. Wolfspeed, a Cree Company and leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), touted several ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new ...

GREENSBORO, N.C.--(BUSINESS WIRE)--Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN on SiC HEMT power amplifiers being ...