AUSTIN, Texas — Advanced Micro Devices researchers have developed a low aspect ratio Finfet-like transistor the company may begin producing as early as 2007 at the 45-nm node. Zoran Krivokapic, the ...
Austin, Texas – Worried that a high-k gate oxide dielectric for scaling planar CMOS may arrive later than expected, several companies are getting serious about vertical multigate transistors that ...
A key approach for designing transistors below 32 nanometers is a “fin-based” multigate design, or FinFET, in which the conducting channel is wrapped by a thin silicon “fin” forming the body of the ...
A new technical paper titled “Implementation of Negative Differential Resistance-Based Circuits in Multigate Ge Transistors” was published by researchers at TU Wien and JKU (Johannes Kepler University ...
Contacting Individual On-Surface Synthesized Graphene Nanoribbons In A Multigate Transistor Geometry
A technical paper titled “Contacting individual graphene nanoribbons using carbon nanotube electrodes” was published by researchers at Swiss Federal Laboratories for Materials Science and Technology, ...
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