Semiconductor Engineering

Zero-Bias Power-Detector Circuits based on MoS

Scientists from RWTH Aachen University, AMO GmbH, AIXTRON SE, and EPFL have demonstrated power detectors based on Molybdenum disulphide (MoS 2) that operate at zero bias.
sciencex

Novel 2D layered dielectrics for ultra-thin transistors

The invention of the transistor was a significant breakthrough that altered the course of history for the electronics and computer industries. They are an inseparable part of any electronic device ...
PBS

Field Effect Transistors

Normally, semiconductors don't have many free electrons. Since electric current relies on those free electrons, the amount of current that can travel through an isolated semiconductor is negligible.
Semiconductor Engineering

A Benchmark Study Of Complementary-Field Effect Transistor (CFET) Process Integration Options: Comparing Bulk vs. SOI vs. DSOI Starting Substrates

Compare 3 process flows in terms of robustness to process variation to see which one has the lowest likelihood of processing failures. Sub-5 nm logic nodes will require an extremely high level of ...
AZoM on MSN

Strain and advanced materials boost performance in atom-thin transistors

New modeling reveals how strain and high-k dielectrics mitigate phonon scattering in ultra-scaled MoS2 transistors, enhancing performance in nanometre devices.
Hackaday

Biasing That Transistor Part 4: Don’t Forget The FET

Over the recent weeks here at Hackaday, we’ve been taking a look at the humble transistor. In a series whose impetus came from a friend musing upon his students arriving with highly developed ...