Northrop Grumman researchers have produced and demonstrated a transistor that has a maximum frequency of operation of more than 1,000 GHz. The device is an indium phosphide-based High Electronic ...
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Researchers from IBM (East Fishkill, NY) and Georgia Institute of Technology (Atlanta, GA) recently announced an SiGe transistor operating above 500 GHz claimed 250 times faster than the average ...
A 28-V, 5-W class high electron mobility transistor (HEMT) from Nitronex now operates at frequencies that fall between 5.1 GHz to 5.2 GHz and 5.7 GHz to 5.8 GHz. The NPTB00004 gallium nitride on ...
For nearly two decades, two‑dimensional (2D) semiconductors have been studied as a complement or possible successor to silicon transistors, promising smaller, faster and more energy‑efficient ...
For nearly two decades, two-dimensional (2D) semiconductors have been studied as a complement or possible successor to silicon transistors, promising smaller, faster and more energy-efficient ...
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Key transistor for next-generation 3D stacked semiconductors operates without current leakage
A research team led by Professor Jae Eun Jang and Dr. Goeun Pyo from the Department of Electrical Engineering and Computer Science at DGIST has developed "dual-modulated vertically stacked transistors ...
EPC recently introduced the EPC2106, an enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial ...
It’s the mid 1990’s and I am a design engineer for a company that designs and manufactures custom measurement systems and high power electronics. Our customers range from experimental fusion reactor ...
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