Nature

High Electron Mobility Transistor Devices and Applications

High electron mobility transistors (HEMTs) exploit a heterostructure to confine a high-mobility two-dimensional electron gas at the interface between wide-bandgap semiconductor layers. This ...
Nature

High Electron Mobility Transistors and Thermal Management

High Electron Mobility Transistors (HEMTs) underpin many advanced electronic applications due to their superior performance in high-frequency and high-power regimes. The ongoing miniaturisation and ...
EDN

GaN fundamentals: Hybrid structures, HEMT, and substrate choices

Part 1 of this article series on gallium nitride (GaN) fundamentals described crystal structures and the formation of the two-dimensional electron gas (2DEG), along with material figures of merit and ...
Electronic Design

GaN HEMTs Bring Low-Noise Power to Switching Apps

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...

Enphase Energy Publishes Technical White Paper on GaN Technology for Next-Generation Distributed Power Electronics

Enphase Energy, Inc. (NASDAQ: ENPH), a global energy technology company, today published a technical white paper titled “Enphase Adoption of GaN Bi-Directional Switch Technology for Distributed Power ...
Business Wire

Teledyne e2v HiRel Expands Portfolio of Space-Screened GaN HEMTs

MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel announces the addition of new space screened versions of its popular 100 V, 90 A and 650 V, 30 A high reliability gallium nitride high electron ...
Semiconductor Engineering

Noise Parameter Survey Of Millimeter Wave GaN HEMT Technologies

A technical paper titled “A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications” was published by researchers at Wright-Patterson AFB, Teledyne Scientific, HRL Laboratories, BAE ...
New Electronics

Modelithics adds Guerrilla RF GaN HEMT models to its COMPLETE Library

Modelithics expands RF and microwave simulation offering with the addition of new GaN HEMT models from Guerrilla RF.
Semiconductor Engineering

Improving GaN Device Architectures

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...
EDN

Infineon expands GaN HEMT lineup

Infineon is adding two more families of high and medium voltage GaN transistors to its portfolio of CoolGaN HEMTs spanning 40 V to 700 V. According to the company, this expansion will enable customers ...
AZOM

How To Measure High Aspect Ratio HEMT Vias Non-Destructively Using 3D Optical Profiling

Wide bandgap semiconductor materials are highly useful in power electronics due to their ability to work at high temperatures, power, and frequency. Gallium nitride (GaN) is a wide bandgap ...
Electronic Design

Gravitate to These GaN Apps to Enhance Power Performance

How to improve power-converter density and efficiency using GaN HEMT in a half-bridge configuration. What’s the difference between Direct-Drive GaN and cascoded D-mode GaN designs? Savvy power design ...