Remote epitaxy has been gaining attention in the field of semiconductor manufacturing for growing thin films that copy the crystal structure of the template, which can later be exfoliated to form ...

Gallium nitride (GaN) has emerged as a key semiconductor in the evolution of power electronics thanks to its wide bandgap, high critical electric field and superior carrier mobility. Recent advances ...

Remote epitaxy has been gaining attention in the field of semiconductor manufacturing for growing thin films that copy the crystal structure of the template, which can later be exfoliated to form ...

PLAINVIEW, N.Y., Nov. 05, 2025 (GLOBE NEWSWIRE) -- Veeco Instruments Inc. (VECO) announced today receipt of an order for a Propel®300 system from a major power semiconductor integrated device ...

Ganvix, the US startup company developing blue vertical cavity surface-emitting lasers (VCSELs) based on nanoporous gallium nitride (GaN) semiconductor material, has agreed a collaboration with ...

Researchers grow single-crystal GaN films on amorphous glass using a chemically converted molybdenum nitride buffer, removing the need for crystalline substrates in epitaxy (Nanowerk Spotlight) The ...

The news about TSMC exiting the gallium nitride (GaN) foundry business has stunned the semiconductor industry, also laying the groundwork for integrated device manufacturers (IDMs) like Infineon ...

Episil and its epitaxy-focused subsidiary Episil Precision, spanning both silicon (Si) and wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), told investors on Sept.

Remote epitaxy, a promising technology for thin film growth and exfoliation, suffers from substrate damage under harsh conditions. In this regard, researchers recently investigated the effect of ...