Researchers at Soitec and Nanyang Technological University have reported 60%+ power-added efficiency (PAE), for moderately scaled GaN-on-Si HEMTs at 30GHz operation. The devices also perform with ...

DUBLIN--(BUSINESS WIRE)--The "GaN-on-Sapphire HEMT Power IC by Power Integrations" report has been added to ResearchAndMarkets.com's offering. The report provides an estimation of the production costs ...

Electric vehicles, converters for charging infrastructure, energy storage systems, solar and wind power plants or new types of heat pumps — key technologies for the energy transition rely on ...

MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel is launching a new, ruggedized 100V/90A GaN power HEMT (High Electron Mobility Transistor) based on industry-leading technology from GaN Systems.

Innoscience has announced a family of four new integrated devices that combine a GaN HEMT, gate driver, current sense, protection and other functions in a single, industry-standard QFN 6 × 8-mm ...

Download this article in PDF format. The end markets serviced by the semiconductor industry are rapidly adopting power semiconductor devices based on wide-bandgap (WBG) semiconductors, including ...

Innoscience has brought out a range of 650V E-mode GaN HEMT devices. New 190mΩ, 350mΩ and 600mΩ R DS(on) devices in industry-standard 8×8 and 5×6 DFN packages join previously-announced 140mΩ, 240mΩ ...

GaN Systems offers an evaluation platform for its GaN enhancement-mode high-electron-mobility transistors (E-HEMTs) with half-bridge designs that boost output power by more than 30% without increasing ...

TOKYO, Dec 5, 2019 - (JCN Newswire) - - Fujitsu Limited and Fujitsu Laboratories Ltd. have successfully developed the world's first technology for growing a diamond film with highly-efficient heat ...

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...